High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
Identifieur interne : 00A729 ( Main/Repository ); précédent : 00A728; suivant : 00A730High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
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Abstract
AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the red, orange, yellow, and yellow-green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate (AS) LEDs, absorbing substrate LEDs enhanced by distributed-Bragg-reflectors (DBRs), transparent substrate (TS) LEDs, thin-film (TF) LEDs, and LEDs using omnidirectional reflectors (ODRs). Some of these device structures have well-known deficiencies: A significant fraction of light is absorbed in the GaAs substrate in AS-LEDs; DBRs are essentially transparent at oblique angles of incidence leading to substantial optical losses. More recent developments such as TS-LEDs and TF-LEDs avoid these drawbacks. High-reflectivity, electrically conductive ODRs were recently developed that considerably outperform conventional distributed Bragg reflectors. LEDs using such conductive ODRs can replace DBRs in AlGaInP LEDs and are potential candidates for low-cost high-efficiency LEDs suitable for high-power solid-state lighting applications. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications</title><author><name sortKey="Gessmann, Th" uniqKey="Gessmann T">Th. Gessmann</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Schubert, E F" uniqKey="Schubert E">E. F. Schubert</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0097095</idno><date when="2004-03-01">2004-03-01</date><idno type="stanalyst">PASCAL 04-0097095 AIP</idno><idno type="RBID">Pascal:04-0097095</idno><idno type="wicri:Area/Main/Corpus">00BE89</idno><idno type="wicri:Area/Main/Repository">00A729</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Distributed Bragg reflectors</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Optical losses</term><term>Reflectivity</term><term>Reviews</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>Article synthèse</term><term>Aluminium composé</term><term>Gallium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Réflecteur Bragg réparti</term><term>Diode électroluminescente</term><term>Perte optique</term><term>Facteur réflexion</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the red, orange, yellow, and yellow-green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate (AS) LEDs, absorbing substrate LEDs enhanced by distributed-Bragg-reflectors (DBRs), transparent substrate (TS) LEDs, thin-film (TF) LEDs, and LEDs using omnidirectional reflectors (ODRs). Some of these device structures have well-known deficiencies: A significant fraction of light is absorbed in the GaAs substrate in AS-LEDs; DBRs are essentially transparent at oblique angles of incidence leading to substantial optical losses. More recent developments such as TS-LEDs and TF-LEDs avoid these drawbacks. High-reflectivity, electrically conductive ODRs were recently developed that considerably outperform conventional distributed Bragg reflectors. LEDs using such conductive ODRs can replace DBRs in AlGaInP LEDs and are potential candidates for low-cost high-efficiency LEDs suitable for high-power solid-state lighting applications. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications</s1></fA08><fA11 i1="01" i2="1"><s1>GESSMANN (Th.)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHUBERT (E. F.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>2203-2216</s1></fA20><fA21><s1>2004-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0097095</s0></fA47><fA60><s1>P</s1><s3>SY</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the red, orange, yellow, and yellow-green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate (AS) LEDs, absorbing substrate LEDs enhanced by distributed-Bragg-reflectors (DBRs), transparent substrate (TS) LEDs, thin-film (TF) LEDs, and LEDs using omnidirectional reflectors (ODRs). Some of these device structures have well-known deficiencies: A significant fraction of light is absorbed in the GaAs substrate in AS-LEDs; DBRs are essentially transparent at oblique angles of incidence leading to substantial optical losses. More recent developments such as TS-LEDs and TF-LEDs avoid these drawbacks. High-reflectivity, electrically conductive ODRs were recently developed that considerably outperform conventional distributed Bragg reflectors. 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